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Partial agglomeration during Co silicide film formation

Published online by Cambridge University Press:  31 January 2011

Z.G. Xiao ,
G.A. Rozgonyi ,
C.A. Canovai  and
C.M. Osburn
Z.G. Xiao
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916
G.A. Rozgonyi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916
C.A. Canovai
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
C.M. Osburn*
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
*
a)MCNC, Center for Microelectronics, Research Triangle Park, North Carolina 27709.
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Abstract

The agglomeration of Co silicide films formed on Si substrates processed with evaporated Co film thicknesses from 9 to 28 nm was investigated by TEM and four-point-probe resistivity measurements. It was found that the upper portion of a reacting Co or Co silicide film can agglomerate independently from the main body of the silicide layer. This phenomenon is designated partial agglomeration in contrast to whole film agglomeration which generally occurs at higher temperatures. Partial agglomeration appears to develop more extensively for thinner films and poses a serious limitation for the application of thin silicide contact layers for advanced VLSI devices. The formation mechanism of partial agglomeration and the reason for its variation with film thickness are explained on the basis of a previously presented [MRS Proc. Vol. 202, p. 101 (1991)] theoretical model of grain boundary grooving and the onset of islanding in silicide films. Kirkendall voids and phase transformation induced volume changes play an important role in the process.

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 2 , February 1992 , pp. 269 - 272
Copyright
Copyright © Materials Research Society 1992

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References

1.Nicolet, M. A. and Lau, S. S., in VLSI Electronics Microstructure Science, edited by Einspruch, N. G. and Larrabee, G. B. (Academic Press, New York, 1983), Vol. 6, p. 330.Google Scholar
2.van, L.Hove, den and de, R. F. Keersmaecker, Reduced Thermal Processing for ULSI, Series B: Physics, edited by Levy, R. A. (Plenum Press, New York, 1988), Vol. 207, p. 53.Google Scholar
3.Xiao, Z. G., Rozgonyi, G. A., Canovai, C. A., and Osburn, C.M., in Evolution of Thin Film and Surface Microstructure, edited by Thompson, C. V., Tsao, J. Y., and Srolovitz, D. J. (Mater. Res. Soc. Symp. Proc. 202, Pittsburgh, PA, 1991), p. 101.Google Scholar
4.Gurp, G. J. and Lagnereis, C., J. Appl. Phys. 46, 4301 (1975).CrossRefGoogle Scholar
5.Lien, C.D., Nicolet, M. A., and Lau, S. S., Appl Phys. A 34, 249 (1984).CrossRefGoogle Scholar
6.van Gurp, G. J., van der Weg, W. F., and Sigurd, D., J. Appl. Phys. 49, 4011 (1978).CrossRefGoogle Scholar
7.d'Heurle, F. M. and Petersson, C. S., Thin Solid Films 128, 283 (1985).CrossRefGoogle Scholar
8.Veuillen, J. Y., Derrien, J., Badoz, P. A., Rosencher, E., and d'Anterroches, C., Appl. Phys. Lett. 51, 1448 (1987).CrossRefGoogle Scholar
9.Ruterana, P., Houdy, P., and Boher, P., J. Appl. Phys. 68, 1033 (1990).CrossRefGoogle Scholar
10.Berry, R. S., Bernholc, J., and Salamon, P., Appl. Phys. Lett. 58, 595 (1991).CrossRefGoogle Scholar
11.Xiao, Z. G., Rozgonyi, G. A., and Honeycutt, J. W., manuscript in preparation.Google Scholar
12.Osburn, C. M., J. Electron. Mater. 19, 67 (1990).CrossRefGoogle Scholar