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Postdeposition annealing of NiOx thin films: A transition from n-type to p-type conductivity for short wave length optoelectronic devices

Published online by Cambridge University Press:  07 February 2013

Manisha Tyagi ,
Monika Tomar  and
Vinay Gupta
Manisha Tyagi
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
Monika Tomar
Affiliation:
Physics Department, Miranda House, University of Delhi, Delhi 110007, India
Vinay Gupta*
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
*
a)Address all correspondence to this author. e-mail: drguptavinay@gmail.com
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Abstract

The present work highlights the effect of postdeposition annealing (373–773 K) on the tunability of electrical conductivity of radio frequency sputtered NiOx thin films with both n-type and p-type behavior. The NiOx thin films were polycrystalline with preferred (200) orientation with high optical transmission. The as-grown NiOx thin film exhibits an n-type behavior with room temperature resistivity of 4.80 × 10−3 Ω-cm and majority carrier (electrons) concentration of about 3.90 × 1020 cm−3. Film annealed at 473 K was p-type having resistivity of 1.54 × 10−1 Ω-cm and majority carrier (hole) concentration of about 4.45 × 1018 cm−3. Hall effect and thermoelectric power measurements confirm a transition in electrical conduction from n-type to p-type with postdeposition annealing at 473 K. The observed tunability of electrical conductivity of NiOx thin film will pave way toward realization of p-n homojunction for short wave length optoelectronic device applications.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 5 , 14 March 2013 , pp. 723 - 732
Copyright
Copyright © Materials Research Society 2013

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