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The quasicrystalline transformation in the AlCr system

Published online by Cambridge University Press:  31 January 2011

D.A. Lilienfeld ,
M. Nastasi ,
H.H. Johnson ,
D.G. Ast  and
J.W. Mayer
D.A. Lilienfeld
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
M. Nastasi
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
H.H. Johnson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
D.G. Ast
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
J.W. Mayer
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
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Abstract

Amorphous Al80Cr20 films were made by coevaporation and by room temperature ion irradiation of the coevaporated films. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion beam assisted anneal. The intensity of the quasicrystalline electron diffraction pattern increases continuously within the annealing temperature range from 547°to 607°C. The starting state of the films (as-deposited or ion-irradiated codeposited) had no effect on the thermal transformation to the quasicrystalline state. Ion irradiation of the amorphous phase at 200°C produces a more complete set of icosahedral diffraction lines. Icosahedral AlCr has the same reciprocal lattice spacings as icosahedral AlMn.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 237 - 242
Copyright
Copyright © Materials Research Society 1986

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