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Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces

Published online by Cambridge University Press:  31 January 2011

D.D. Allred ,
J. Gonzalez-Hernandez ,
O.V. Nguyen ,
D. Martin  and
D. Pawlik
D.D. Allred
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
J. Gonzalez-Hernandez
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
O.V. Nguyen
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. Martin
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. Pawlik
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

Raman spectroscopy (RS) and low-angle x-ray diffraction (LAXRD) have been used to characterize semiconductor multilayer interfaces. In the present study a model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the “blurring” of interfaces is possible because peak heights in the Raman spectra of thin films are proportional to the number of scatterers, thus RS is capable of directly “counting” the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. The relative roles of LAXRD and RS in investigating interfaces are contrasted. Several a-Si/a-Ge multilayers deposited by ultra-high vacuum (UHV) evaporation (MBD) are found to exhibit very regular periodicities and exceptionally sharp interfaces (<1.0 Å intermixing).

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 3 , June 1986 , pp. 468 - 475
Copyright
Copyright © Materials Research Society 1986

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References

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