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Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

Published online by Cambridge University Press:  31 January 2011

S. Arscott ,
R. E. Miles ,
J. D. Kennedy  and
S. J. Milne
S. Arscott
Affiliation:
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds, LS2 9JT, United Kingdom
R. E. Miles
Affiliation:
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds, LS2 9JT, United Kingdom
J. D. Kennedy
Affiliation:
School of Chemistry, The University of Leeds, Leeds, LS2 9JT, United Kingdom
S. J. Milne
Affiliation:
School of Materials, The University of Leeds, Leeds, LS2 9JT, United Kingdom
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Abstract

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 2 , February 1999 , pp. 494 - 499
Copyright
Copyright © Materials Research Society 1999

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