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Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures

Published online by Cambridge University Press:  31 January 2011

S. A. Grot ,
S. Lee ,
G.Sh. Gildenblat ,
C. W. Hatfield ,
C. R. Wronski ,
A. R. Badzian ,
T. Badzian  and
R. Messier
S. A. Grot
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
S. Lee
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
G.Sh. Gildenblat
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
C. W. Hatfield
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
C. R. Wronski
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
A. R. Badzian
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
T. Badzian
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2497 - 2501
Copyright
Copyright © Materials Research Society 1990

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References

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