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Residual stresses in polycrystalline Cu/Cr multilayered thin films

Published online by Cambridge University Press:  31 January 2011

A. Misra ,
H. Kung ,
T. E. Mitchell  and
M. Nastasi
A. Misra
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
H. Kung
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
T. E. Mitchell
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
M. Nastasi
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Residual stresses in sputter-deposited Cu/Cr multilayers and Cu and Cr single-layered polycrystalline thin films were evaluated by the substrate curvature method. The stresses in the multilayers were found to be tensile and to increase in magnitude with increasing layer thickness (h) to a peak value of ∼1 GPa for h = 50 nm. For h > 50 nm, the residual stress decreased with increasing h but remained tensile. The same trends were observed in single-layered Cu and Cr thin films, except that the maximum stress in Cu films is 1 order of magnitude lower than that in Cr. Transmission electron microscopy was used to study the microstructural evolution as a function of layer thickness. The evolution of tensile growth stresses in Cr films is explained by island coalescence and subsequent growth with increasing thickness. Estimates of the Cr film yield strength indicated that, for h ≥ 50 nm, the residual stress may be limited by the yield strength. Substrate curvature measurements on bilayer films of different thicknesses were used to demonstrate that a non-negligible contribution to the total stress in the multilayers arises from the interface stress.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 3 , March 2000 , pp. 756 - 763
Copyright
Copyright © Materials Research Society 2000

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