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Selective growth of diamond crystals on the apex of silicon pyramids

Published online by Cambridge University Press:  31 January 2011

R. Ramesham  and
C. Ellis
R. Ramesham
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849-5201
C. Ellis
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849-5201
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Abstract

Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1189 - 1194
Copyright
Copyright © Materials Research Society 1992

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