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Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires

Published online by Cambridge University Press:  08 November 2019

Shinjiro Hara Open the ORCID record for Shinjiro Hara [Opens in a new window] ,
Matthias T. Elm  and
Peter J. Klar
Shinjiro Hara*
Affiliation:
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0813, Japan
Matthias T. Elm
Affiliation:
Center for Materials Research, Justus Liebig University of Giessen, Giessen 35392, Germany; Institute of Experimental Physics I, Justus Liebig University of Giessen, Giessen 35392, Germany; and Institute of Physical Chemistry, Justus Liebig University of Giessen, Giessen 35392, Germany
Peter J. Klar
Affiliation:
Center for Materials Research, Justus Liebig University of Giessen, Giessen 35392, Germany; and Institute of Experimental Physics I, Justus Liebig University of Giessen, Giessen 35392, Germany
*
a)Address all correspondence to this author. e-mail: hara@rciqe.hokudai.ac.jp
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Abstract

The authors summarize the results of selective-area growth of vertical MnAs/InAs heterojunction nanowire (NW) arrays and present a preliminary characterization of the transport properties of a single MnAs/InAs heterojunction NW and a single InAs host NW for MnAs inclusions. During the endotaxy of MnAs after the selective-area growth of host InAs nanowires (NWs) on partially SiO2-masked GaAs(111)B substrates, hexagonal NiAs-type MnAs nanoclusters (NCs), which exhibit spontaneous magnetization at room temperature, are formed with the 〈0001〉 direction oriented parallel to the 〈111〉B direction of the zinc-blende-type InAs host NWs. For InAs host NWs, a large positive ordinary magnetoresistance (MR) effect up to 165% is observed at temperatures between 7 and 280 K. In addition, magnetotransport measurements reveal universal conductance fluctuations and a weak Anderson localization at temperatures up to 20 K due to a charge-accumulation layer formed at the surface. Single MnAs/InAs heterojunction NWs, however, exhibit only a negative MR effect, which is independent of temperature T < 10 K and linearly decreases up to −10% at 10 T with increasing magnetic field. These results reveal the tremendous influence of ferromagnetic NCs on the transport behavior inside the InAs host NWs.

Keywords

nanostructurevapor phase epitaxy (VPE)magnetoresistance (transport)
Type
Invited Paper
Information
Journal of Materials Research , Volume 34 , Issue 23 , 16 December 2019 , pp. 3863 - 3876
Copyright
Copyright © Materials Research Society 2019 

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