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Self-limited growth of InAs at 480 °C
Published online by Cambridge University Press: 03 March 2011
Abstract
Self-limited growth of InAs at 480 °C is achieved by a rotating substrate method with a specially designed susceptor. The residual precursors and the boundary layer are removed by the mechanical shear-off. Prevention of the precursor carryover and the gas-phase decomposition are thought to result in the self-limited growth of InAs at temperatures as high as 480 °C.
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- Copyright © Materials Research Society 1994
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