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Structural and optical transformations by laser irradiation of InSb-based thin films

Published online by Cambridge University Press:  31 January 2011

J. Solis ,
K. A. Rubin  and
C. Ortiz
J. Solis
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
K. A. Rubin
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
C. Ortiz
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
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Abstract

The effect of 647 nm Kr-ion laser irradiation on small, 1 μm diameter regions of (In0.43Sb0.57)0.87Ge0.13 and In0.43Sb0.57 amorphous as-deposited thin alloy films was determined. Laser irradiation times of 50 ns-20 μs produced three distinct reflectivity states which differed from the original as-deposited values for both alloys. Both alloys exhibited an amorphous state of increased reflectivity after short pulse (∼100 ns to ∼500 ns) laser irradiation which has not been previously observed. Slightly longer pulses caused surface corrugations to form in these high reflectivity regions. The formation of corrugations was consistent with stress relaxation. Further laser annealing caused crystallization and decreased reflectivity. The addition of Ge increased the minimum time to crystallize by one order of magnitude, inhibited the precipitation of pure Sb crystals, and caused crystallites to nucleate at the spot edge rather than from the center of the spot. Optical, microstructure, and electrical changes were correlated. SEM and TEM showed that regions of similar reflectivity could result from significantly different microstructures.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 1 , January 1990 , pp. 190 - 201
Copyright
Copyright © Materials Research Society 1990

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References

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