Hostname: page-component-5c6d5d7d68-sv6ng Total loading time: 0 Render date: 2024-08-19T16:18:17.902Z Has data issue: false hasContentIssue false

Structural imperfections in CVD diamond films

Published online by Cambridge University Press:  31 January 2011

W. Zhu
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
A. R. Badzian
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Get access

Abstract

Microwave plasma assisted CVD diamond films have been studied by transmission electron microscopy. Cross-section TEM as well as plan-view TEM methods were used to investigate various structural defects formed in the films. It was found that diamond films contain a large number of stacking faults and twins which lie on the {111} planes in diamond. With an increase in methane concentration during the deposition process, the density of these defects increases and their dimensions become smaller. The tendency for forming these structural defects is of concern in developing tailored structures and properties of diamond films.

Type
Articles
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Humble, P.Mackenzie, J. K. and Olsen, A.Philos. Mag. 52 605 (1985).CrossRefGoogle Scholar
2Walmsley, J.C. and Lang, A.R.J. Mat. Sci. Lett. 2 785 (1983).CrossRefGoogle Scholar
3Matsumoto, S. and Matsui, Y.J. Mat. Sci. 18 1785 (1983).CrossRefGoogle Scholar
4Badzian, A. R.Badzian, T.. Roy, R.Messier, R. and Spear, K. E.Mater. Res. Bull. 23 531 (1988).CrossRefGoogle Scholar
5Hirsch, P.Howie, A.Nicholson, R.B.Pashley, D.W. and Whelan, M. J.Electron Microscopy of Thin Crystals (Robert E. Krieger, Huntington, New York, 1977), p. 153.Google Scholar
6Matthews, J.W.Philos. Mag. 4 1017 (1959).Google Scholar
7Matthews, J.W.Philos. Mag. 7 915 (1962).CrossRefGoogle Scholar
8Phillips, V.A.Philos. Mag. 5 571 (1960).Google Scholar
9Jaccodine, J.Appl. Phys. Lett. 2 201 (1963).Google Scholar
10Mendelson, S.J. Appl. Phys. 35 1570 (1964).Google Scholar
11Booker, G.R. and Stickler, R.J. Appl. Phys. 33 3281 (1962).CrossRefGoogle Scholar
12Badzian, A. R. and Badzian, T.Surf. Coat. Technol. 36 283 (1988).CrossRefGoogle Scholar
13Glass, J. T.Williams, B. E. and Davis, R. F.SPIE Micro-Optoelectronic Materials 877 56 (1988).CrossRefGoogle Scholar
14Klassen-Neklyudova, M. V., Mechanical Twinning of Crystals, translated from Russian by Bradley, J. E. S. (Consultants Bureau, New York, 1964), p. 32.CrossRefGoogle Scholar
15Booker, G.R. and Unvala, B. A.Philos. Mag: 8 1597 (1963).CrossRefGoogle Scholar