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Structure of improved tribological properties of V–5at.%Ti alloys by nitrogen implantation at low energy

Published online by Cambridge University Press:  18 July 2011

I. Colera*
Affiliation:
Universidad Carlos III de Madrid, Departimento de Física, Avenida de la Universidad 30, 28911 Madrid, Spain
E. Roman
Affiliation:
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
J.A. García
Affiliation:
AIN-Centro de Ingeniería Avanzada de Superficies, Cordobilla, 31191 Pamplona, Spain
R. Rodríguez
Affiliation:
AIN-Centro de Ingeniería Avanzada de Superficies, Cordobilla, 31191 Pamplona, Spain
C. Ballesteros
Affiliation:
Universidad Carlos III de Madrid, Departimento de Física, Avenida de la Universidad 30, 28911 Madrid. Spain
J.L. de Segovia
Affiliation:
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
*
a) Address all correspondence to this author. e-mail: icolera@fis.uc3m.es
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Abstract

The aim of the present work was to study the morphological, structural, and chemical analysis as a function of depth in vanadium alloys with a 5 at.% of titanium implanted at 673 K with 1.2 keV N+ ions, by transmission electron microscopy (TEM), glow discharge (GD) analysis, and x-ray photoemission spectroscopy. These results are correlated with those of previously published nanoindentation tests, and the species and chemical states responsible for the increase in hardness are identified. The maximum increase in hardness corresponds to the highest N concentration, measured by both photoemission spectroscopy and GD. In addition, the thickness of the layer (≈1000 nm), where structural modifications are observed using TEM, can also be directly correlated with the thickness of the implanted layer, where an incremental increase in hardness has previously been measured. These findings support the conclusion that the formation of vanadium and titanium nitride/oxynitrides (–N–O,–O–N–H) compounds are responsible for the increased hardness of these V–5at.% Ti samples implanted with N at low ion energy and high sample temperature.

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Articles
Copyright
Copyright © Materials Research Society 2007

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