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A study of barium strontium titanate thin films for use in bypass capacitors

Published online by Cambridge University Press:  31 January 2011

B. A. Baumert ,
L-H. Chang ,
A. T. Matsuda ,
C. J. Tracy ,
N. G. Cave ,
R. B. Gregory  and
P. L. Fejes
B. A. Baumert
Affiliation:
Materials Technology Center, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
L-H. Chang
Affiliation:
Materials Technology Center, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
A. T. Matsuda
Affiliation:
Materials Technology Center, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
C. J. Tracy
Affiliation:
Materials Technology Center, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
N. G. Cave
Affiliation:
Materials Characterization Laboratory, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
R. B. Gregory
Affiliation:
Materials Characterization Laboratory, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
P. L. Fejes
Affiliation:
Materials Characterization Laboratory, Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 West Broadway Road, Mail Drop M360, Mesa, Arizona 85202
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Extract

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 1 , January 1998 , pp. 197 - 204
Copyright
Copyright © Materials Research Society 1998

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