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Thin film growth of the 2122-phase of BCSCO superconductor with high degree of crystalline perfection

Published online by Cambridge University Press:  31 January 2011

K.K. Raina ,
S. Narayanan  and
R.K. Pandey
K.K. Raina
Affiliation:
Center for Electronic Materials, Electrical Engineering Department, Texas A&M University, College Station, Texas 77843-3128
S. Narayanan
Affiliation:
Center for Electronic Materials, Electrical Engineering Department, Texas A&M University, College Station, Texas 77843-3128
R.K. Pandey
Affiliation:
Center for Electronic Materials, Electrical Engineering Department, Texas A&M University, College Station, Texas 77843-3128
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Abstract

Thin films of the 80 K-phase of BiCaSrCu-oxide superconductor having the composition of Bi2Ca1.05Sr2.1Cu2.19Ox and high degree of crystalline perfection have been grown on c-axis oriented twin free single crystal substrates of NdGaO3. This has been achieved by carefully establishing the growth conditions of the liquid phase epitaxy (LPE) experiments. The temperature regime of 850 °C to 830 °C and quenching of the specimens on the termination of the growth period are found to be pertinent for the growth of quasi-single crystalline superconducting BCSCO films on NdGaO3 substrates. The TEM analysis reveals a single crystalline nature of these films which exhibit 100% reflectivity in infrared regions at liquid nitrogen temperature.

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Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2303 - 2307
Copyright
Copyright © Materials Research Society 1992

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