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TiN prepared by plasma source ion implantation of nitrogen into Ti as a diffusion barrier for Si/Cu metallization

Published online by Cambridge University Press:  31 January 2011

W. Wang ,
J. H. Booske ,
H. L. Liu ,
S. S. Gearhart ,
J. L. Shohet ,
S. Bedell  and
W. Lanford
W. Wang
Affiliation:
Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706
J. H. Booske
Affiliation:
Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706
H. L. Liu
Affiliation:
Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706
S. S. Gearhart
Affiliation:
Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706
J. L. Shohet
Affiliation:
Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706
S. Bedell
Affiliation:
Department of Physics, State University of New York-Albany, Albany, New York 12222
W. Lanford
Affiliation:
Department of Physics, State University of New York-Albany, Albany, New York 12222
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Abstract

A method of forming TiN films for Si/Cu metallization by using plasma source ion implantation (PSII) of nitrogen into Ti is described. The PSII process utilizes a dose of 1 × 1017 ions/cm2 and peak voltages of –10, –15, and –20 kV. The properties of such TiN films as diffusion barriers between Cu and Si were investigated by annealing Cu(2000 A)/TiN/Ti/Si films in vacuum from 500 °C to 700 °C, and by analyzing with four-point probe sheet resistance measurements, Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). The TiN films made at peak voltages of –15 and –20 kV were stable barriers against Cu diffusion after annealing at temperatures higher than 600 °C.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 3 , March 1998 , pp. 726 - 730
Copyright
Copyright © Materials Research Society 1998

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References

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