Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Perry, W. G.
Zheleva, T.
Linthicum, K. J.
Bremser, M. D.
Davis, R. F.
Shan, W.
and
Song, J. J.
1996.
Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures.
MRS Proceedings,
Vol. 449,
Issue. ,
Bremser, M. D.
Perry, W. G.
Zheleva, T.
Edwards, N. V.
Nam, O. H.
Parikh, N.
Aspnes, D. E.
and
Davis, Robert F.
1996.
Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 1,
Issue. ,
Bergman, L.
Bremser, M. D.
Christman, J. A.
King, S. W.
Davis, R. F.
and
Nemanich, R. J.
1996.
Raman Analysis of Electron-Phonon Interactions in GaN Films.
MRS Proceedings,
Vol. 449,
Issue. ,
Kamińska, E.
Piotrowska, A.
Guziewicz, M.
Kasjaniuk, S.
Barcz, A.
Dynowska, E.
Bremser, M. D.
Nam, O. H.
and
Davis, R. F.
1996.
Ohmic Contact to n-GaN with TiN Diffusion Barrier.
MRS Proceedings,
Vol. 449,
Issue. ,
Shreter, Y. G.
Rebane, Y. T.
Davis, T. J.
Barnard, J.
Darbyshire, M.
Steeds, J. W.
Perry, W. G.
Bremser, M. D.
and
Davis, R. F.
1996.
Dislocation Luminescence in Wurtzite GaN.
MRS Proceedings,
Vol. 449,
Issue. ,
Running, C.
Dalmer, M.
Deicher, M.
Restle, M.
Bremser, M. D.
Davis, R. F.
and
Hofsäss, H.
1997.
Recovery of Structural Defects in GaN After Heavy Ion Implantation.
MRS Proceedings,
Vol. 468,
Issue. ,
Albrecht, M.
Christiansen, S.
Salviati, G.
Zanotti-Fregonara, C.
Rebane, Y. T.
Shreter, Y. G.
Mayer, M.
Pelzmann, A.
Kamp, M.
Ebeling, K. J.
Bremser, M. D.
Davis, R. F.
and
Strunk, H. P.
1997.
Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN.
MRS Proceedings,
Vol. 468,
Issue. ,
Bremser, M.D.
Perry, W.G.
Zheleva, T.
Edwards, N.V.
Nam, O.H.
Parikh, N.
Aspnes, D.E.
and
Davis, R.F.
1997.
Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates.
Diamond and Related Materials,
Vol. 6,
Issue. 2-4,
p.
196.
Zheleva, Tsvetanka S.
Nam, Ok-Hyun
Bremser, Michael D.
and
Davis, Robert F.
1997.
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures.
Applied Physics Letters,
Vol. 71,
Issue. 17,
p.
2472.
Zheleva, Tsvetanka
Nam, Ok-Hyun
Griffin, Jason D.
Bremser, Michael D.
and
Davis, Robert F.
1997.
Lateral Epitaxy Formation Mechanism And Microstructure Of Selectively Grown Gan Structures.
MRS Proceedings,
Vol. 482,
Issue. ,
Perry, William G.
Zheleva, T.
Bremser, M. D.
Davis, R. F.
Shan, W.
and
Song, J. J.
1997.
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates.
Journal of Electronic Materials,
Vol. 26,
Issue. 3,
p.
224.
Kamińska, E.
Piotrowska, A.
Barcz, A.
Guziewicz, M.
Kasjaniuk, S.
Bremser, M. D.
Davis, R. F.
Dynowska, E.
and
Kwiatkowski, S.
1997.
Ni/Si-Based Ohmic Contacts to p- and n-Type GaN.
MRS Proceedings,
Vol. 482,
Issue. ,
Davis, Robert F.
Bremser, M.D.
Perry, W.G.
and
Ailey, K.S.
1997.
Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates.
Journal of the European Ceramic Society,
Vol. 17,
Issue. 15-16,
p.
1775.
Therrien, R. J.
Nam, O. H.
Bremser, M. D.
Lithicum, K.
Nimii, H.
Carlson, E. P.
Lucovsky, G.
and
Davis, R. F.
1997.
Selection, Growth, and Characterization of Gate Insulators on Mocvd Gallium Nitride for the Use in High Power Field Effect Devices.
MRS Proceedings,
Vol. 482,
Issue. ,
Edgar, J. H.
Yu, Z. J.
Smith, David J.
Chaudhuri, J.
and
Cheng, X.
1997.
X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001).
Journal of Electronic Materials,
Vol. 26,
Issue. 12,
p.
1389.
Ronning, C.
Carlson, E. P.
Thomson, D. B.
and
Davis, R. F.
1998.
Optical activation of Be implanted into GaN.
Applied Physics Letters,
Vol. 73,
Issue. 12,
p.
1622.
Yang, Q.K.
Li, A.Z.
Zhang, Y.G.
Yang, B.
Brandt, O.
and
Ploog, K.
1998.
Growth and mosaic model of GaN grown directly on 6H–SiC(0001) by direct current plasma assisted molecular beam epitaxy.
Journal of Crystal Growth,
Vol. 192,
Issue. 1-2,
p.
28.
Bremser, M. D.
Perry, W. G.
Nam, O. H.
Griffis, D. P.
Loesing, R.
Ricks, D. A.
and
Davis, R. F.
1998.
Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy.
Journal of Electronic Materials,
Vol. 27,
Issue. 4,
p.
229.
Järrendahl, K
Smith, SA
Zheleva, T
Kern, RS
and
Davis, RF
1998.
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy.
Vacuum,
Vol. 49,
Issue. 3,
p.
189.
Marchand, H.
Wu, X. H.
Ibbetson, J. P.
Fini, P. T.
Kozodoy, P.
Keller, S.
Speck, J. S.
DenBaars, S. P.
and
Mishra, U. K.
1998.
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition.
Applied Physics Letters,
Vol. 73,
Issue. 6,
p.
747.