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Absorption coefficient of β–SiC grown by chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Attaullah Solangi  and
M.I. Chaudhry
Attaullah Solangi
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699
M.I. Chaudhry
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699
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Abstract

The absorption coefficient of β–SiC is measured by the transmission technique. β–SiC films are grown on Si substrates by chemical vapor deposition using a buffer layer between β–SiC and the substrate. The absorption coefficient value ranges from 10 to 5.5 × 104 cm−1 in the energy range between 2.42 and 4.4 eV. The bandgap of β–SiC films investigated in this study ranges between 2.13 and 2.32 eV.

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 539 - 541
Copyright
Copyright © Materials Research Society 1992

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