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Benchmarking spintronic logic devices based on magnetoelectric oxides

Published online by Cambridge University Press:  26 September 2014

Dmitri E. Nikonov Open the ORCID record for Dmitri E. Nikonov [Opens in a new window]  and
Ian A. Young
Dmitri E. Nikonov*
Affiliation:
Components Research, Intel Corp., MS RA3-252, Hillsboro, OR 97124, USA
Ian A. Young
Affiliation:
Components Research, Intel Corp., MS RA3-252, Hillsboro, OR 97124, USA
*
a) Address all correspondence to this author. e-mail: dmitri.e.nikonov@intel.com
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Abstract

Active research is ongoing in logic devices beyond complementary metal–oxide–semiconductor electronics. One of the most promising classes of such devices is spintronic/nanomagnetic devices. Switching of magnetization by spin torque (ST) demonstrated in spintronic devices results in relatively high switching energy. An attractive option for lowering switching energy is magnetoelectric (ME) switching achieved by placing other materials (mostly oxides) adjacent to ferromagnets. We review recent experiments on ME switching, classify them according to the ME phenomena into surface anisotropy, exchange bias, and magnetostrictive, and compare switching parameters for these classes. Then, we perform micromagnetic simulations of switching by the effective ME field of both stand-alone nanomagnets and spintronic interconnects. We determine the threshold values of ME field for switching and the resulting switching time. These switching requirements are incorporated into the previously developed benchmarking framework for spintronic logic devices and circuits. We conclude that ME switching results in 1 to 2 orders of magnitude improvement of switching energy and several time improvement of switching delay compared with ST switching across various schemes of spin logic devices.

Keywords

magneticspintronicdevices
Type
Invited Feature Paper
Information
Journal of Materials Research , Volume 29 , Issue 18 , 28 September 2014 , pp. 2109 - 2115
Copyright
Copyright © Materials Research Society 2014 

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