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Electrical and microstructural characteristics of ZnO–Bi2O3-based varistors doped with rare-earth oxides

Published online by Cambridge University Press:  31 January 2011

Nguyen The Hung ,
Nguyen Dinh Quang  and
Slavko Bernik
Nguyen The Hung
Affiliation:
Institute of Physics, National Center for Natural Science And Technology of Vietnam, 46 Nguyen Van Ngoc Street, Hanoi, Vietnam
Nguyen Dinh Quang
Affiliation:
Institute of Science Materials, National Center for Natural Science And Technology of Vietnam, 28 Hoang Quoc Viet Street, Hanoi, Vietnam
Slavko Bernik*
Affiliation:
“JoŠ;ef Stefan” Institute, Jamova 39, 1000 Ljubljana, Slovenia
*
a)Address all correspondence to this author.slavko.bernik@ijs.si
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Abstract

ZnO-based varistor samples with a relatively high Sb2O3 to Bi2O3 ratio of 5 were fired at 1200 °C and found to have a high threshold voltage (VT) of 280 V/mm and a low energy-absorption capacity of 50 J/cm3. The introduction of rare-earth oxides (REO) increased the energy-absorption capacity of Pr6O11- and Nd2O3-doped samples to 110 J/cm3 while their threshold voltage (VT) remained slightly above 300 V/mm. Doping with Pr6O11 and Nd2O3 altered the formation of the spinel phase and significantly changed its particle size and distribution which, as a result, had a positive effect on the energy-absorption capacity of the REO-doped samples. Doping with small amounts of Pr6O11 and Nd2O3 appears to be promising for the preparation of ZnO-based varistors with a high breakdown voltage and a high energy absorption capacity.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 10 , October 2001 , pp. 2817 - 2823
Copyright
Copyright © Materials Research Society 2001

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