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Enhanced field emission from nitrogen-doped amorphous diamond

Published online by Cambridge University Press:  29 June 2016

Ming-Chi Kan ,
Jow-Lay Huang ,
James C. Sung ,
Kuei-Hsien Chen  and
Ding-Fwu Lii
Ming-Chi Kan
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Jow-Lay Huang*
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
James C. Sung
Affiliation:
Kinik Company 64, Chung San Road, Ying-Kuo, Taipei-Hsien 239, Taiwan, Republic of China, and, National Taipei University of Technology, Taipei, Taiwan 106, Republic of China
Kuei-Hsien Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan 106, Republic of China
Ding-Fwu Lii
Affiliation:
Department of Electrical Engineering, Cheng Shiu Institute of Technology, Kaohsiung County, Taiwan 833, Republic of China
*
a)e-mail: JLH888@mail.ncku.edu.tw
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Abstract

Undoped and nitrogen-doped amorphous diamond were deposited on n-type Si(100) substrate by a cathodic arc process. By varying nitrogen partial pressure of the gas mixture in the range of 0 to 55.6%, up to 23 at.% of nitrogen was incorporated in amorphous diamond. The electron spectroscopy for chemical analysis, Raman, and atomic force microscopy measurements indicated that most nitrogen atoms replaced carbon atoms in the amorphous structure. The electron concentration, mobility, and its resistivity were determined by the measurement of Hall effect. With the increasing of nitrogen content, the resistivity curve is U-shaped with a local minimum. The electron emission current in vacuum was characterized based on the diode design. It was found that the electron emission was highly reproducible. This is in contrast to the high variability observed for carbon nanotubes. The lowest resistivity coating had the lowest “turn-on” electrical field of 0.7 V/μxm at the current density of 10 μA/cm2.

Type
Research Article
Information
Journal of Materials Research , Volume 18 , Issue 7 , July 2003 , pp. 1594 - 1599
Copyright
Copyright © Materials Research Society 2003

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