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Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering

Published online by Cambridge University Press:  01 April 2005

H. Högberg ,
P. Eklund ,
J. Emmerlich ,
J. Birch  and
L. Hultman
H. Högberg
Affiliation:
Linköping University, Department of Physics IFM, Thin Film Physics Division, SE-58183 Linköping, Sweden
P. Eklund
Affiliation:
Linköping University, Department of Physics IFM, Thin Film Physics Division, SE-58183 Linköping, Sweden
J. Emmerlich
Affiliation:
Linköping University, Department of Physics IFM, Thin Film Physics Division, SE-58183 Linköping, Sweden
J. Birch
Affiliation:
Linköping University, Department of Physics IFM, Thin Film Physics Division, SE-58183 Linköping, Sweden
L. Hultman
Affiliation:
Linköping University, Department of Physics IFM, Thin Film Physics Division, SE-58183 Linköping, Sweden
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Abstract

We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 °C using direct current magnetron sputtering. X-ray diffraction shows that Ti–Ge–C MAX-phases require higher deposition temperatures in a narrower window than their Ti–Si–C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young’s modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50–200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.

Keywords

CeramicPhysical vapor deposition (PVD)Thin film
Type
Rapid Communication
Information
Journal of Materials Research , Volume 20 , Issue 4 , April 2005 , pp. 779 - 782
Copyright
Copyright © Materials Research Society 2005

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References

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