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Evidence for nonclassical nucleation at solid surfaces in diamond deposition from the gas phase

Published online by Cambridge University Press:  31 January 2011

Massimo Tomellini
Massimo Tomellini
Affiliation:
Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma Tor Vergata, Via della Ricerca Scientifica, 00133 Roma, Italy
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Abstract

In the framework of a previously developed kinetic model, a discriminating criterion is established to distinguish between classical and nonclassical nucleation of diamond at solid surfaces. The two-step model gives the non-steady-state nucleation density function in terms of the rate constants for active site → germ, germ → active site, and germ → nucleus kinetic steps. The criterion states that α/β > 6 is a necessary condition for classical nucleation at surfaces to occur, α and β being functions of the rate constants which can be obtained by appropriate analysis of the experimental data. This criterion is applied to recent results on diamond nucleation at silicon surfaces and indicates nonclassical results The expression of the nonequilibrium Zeldovich factor, Z, is also found in the form Z = [1 + K/nd]−1, K and nd being the rate constants for the germ → nucleus and germ → active site steps, respectively. An estimation of the rate constants is reported and the corresponding Zeldovich factor is evaluated to be 0.6 for nucleation at both Si(100) and Si(111) substrates.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 7 , July 1993 , pp. 1596 - 1604
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1Venables, J. A. and Price, G. L., in Epitaxial Growth, edited by Matthews, J. W. (Academic Press, New York, 1975), Pt. B, Chap. 4.Google Scholar
2Volmer, M. and Weber, A.Z. Phys. Chem. 119, 277 (1926).Google Scholar
3Hirth, J.P. and Pound, G. P. in Progress in Materials Science, edited by Chalmers, B. (Macmillan, New York, 1963), Vol. 11.Google Scholar
4Crystal Growth: an Introduction, edited by Hartmann, P. (North-Holland, Amsterdam, 1973).Google Scholar
5Molinari, E.Polini, R.Terranova, M. L.Ascarelli, P. and Fontana, S.J. Mater. Res. 7, 1778 (1992).CrossRefGoogle Scholar
6Milchev, A.Contemporary Phys. 32, 321 (1991).CrossRefGoogle Scholar
7Kelton, K. F.Greer, A. L. and Thompson, C. V.J. Chem. Phys. 79, 6261 (1983).CrossRefGoogle Scholar
8Frenkel, J. in Kinetic Theory of Liquids (Dover, NY, 1955).Google Scholar
9Tomellini, M.Polini, R. and Sessa, V.J. Appl. Phys. 70, 7573 (1991).CrossRefGoogle Scholar
10Tomellini, M.J. Appl. Phys. 72, 1589 (1992).CrossRefGoogle Scholar
11Frenkel, J.J. Chem. Phys. 7, 538 (1939).Google Scholar
12Becker, R. and Doring, W.Ann. Phys. 24, 719 (1935).Google Scholar
13Kaischew, R.Z. Elektrochem. 61, 35 (1957).Google Scholar
14Turnbull, D. and Fisher, J.C.J. Chem. Phys. 17, 71 (1949).CrossRefGoogle Scholar
15Zeldovich, J.J. Exp. Theor. Phys. (Russ.) 12, 525 (1942).Google Scholar
16Weinberg, M. C. and Zanotto, E. D.J. Non-Cryst. Solids 108, 99 (1989).CrossRefGoogle Scholar
17Molinari, E.Polini, R.Sessa, V.Terranova, M.L. and Tomellini, M.J. Mater. Res. 8, 785 (1993).Google Scholar
18Celii, F.G. and Butler, J.E.Annu. Rev. Phys. Chem. 42, 643 (1991).CrossRefGoogle Scholar
19Molinari, E.Polini, R. and Tomellini, M.Appl. Phys. Lett. 61, 1287 (1992).CrossRefGoogle Scholar
20Molinari, E.Polini, R. and Tomellini, M.J. Mater. Res. 8, 798 (1993).Google Scholar
21Polini, R. and Tomellini, M. Diamon d and Related Materials (1993, in press).Google Scholar
22Kashchiev, D.Surf. Sci. 18, 389 (1969).Google Scholar