Hostname: page-component-5c6d5d7d68-vt8vv Total loading time: 0.001 Render date: 2024-08-14T22:49:57.635Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of (100) oriented diamond thin films on ball structure diamond-like particles

Published online by Cambridge University Press:  31 January 2011

Lee Chow ,
Alan Horner ,
Hooman Sakouri ,
Bahram Roughani  and
Swaminatha Sundaram
Lee Chow
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida 32816
Alan Horner
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida 32816
Hooman Sakouri
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida 32816
Bahram Roughani
Affiliation:
Department of Physics, University of South Florida, Tampa, Florida 33620
Swaminatha Sundaram
Affiliation:
Department of Physics, University of South Florida, Tampa, Florida 33620
Get access

Abstract

The morphology of typical CVD diamond thin films has been shown to be controlled by the concentration of methane during deposition. For example, for CH4 concentrations c < 0.4% the (111) faces dominate, while at 0.4% < c < 1.2% (100) faces dominate. Here we showed that the (100) oriented diamond films can be grown on top of the microcrystalline ball-like particles under suitable conditions. These (100) oriented diamond films are grown under the condition of 1.5% methane in hydrogen, substrate temperature of 680 °C–750 °C, and pressure of 30–80 Torr. The bombardment of the diamond thin films by ions in the plasma is believed to be an important factor for the formation of (100) oriented films on top of the ball-like particles. SEM, Raman, and x-ray techniques were used to characterize the deposited (100) oriented diamond thin films.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1606 - 1609
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Spear, K. E., J. Am. Ceram. Soc. 72, 171 (1989).CrossRefGoogle Scholar
2.Badzian, A. R., Adv. X-ray Analysis 31, 113 (1988).Google Scholar
3.Badzian, A. R., Badzian, T., Roy, R., Messier, R., and Spear, K. E., Mater. Res. Bull. XXIII, 531 (1988).CrossRefGoogle Scholar
4.Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., J. Vac. Sci. Technol. A6, 1816 (1988).CrossRefGoogle Scholar
5.Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., Phys. Rev. B 38, 4067 (1988).CrossRefGoogle Scholar
6.Kobashi, K., Nishimura, K., Miyata, K., Kumagai, K., and Nakaue, A., J. Mater. Res. 5, 2469 (1990).CrossRefGoogle Scholar
7.Wild, Ch., Herres, N., and Koidl, P., J. Appl. Phys. 68, 973 (1990).CrossRefGoogle Scholar
8.Haubner, R. and Lux, B., Int. J. Refract. Hard Mater. 6, 210 (1987).Google Scholar
9.Jeng, D. G., Tuan, H. S., Salat, R. S., and Fricano, G. J., Appl. Phys. Lett. 56, 1968 (1990).CrossRefGoogle Scholar
10.Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 63, 1744 (1988).CrossRefGoogle Scholar
11.Ravi, K. V. and Koch, C. A., Appl. Phys. Lett. 57, 348 (1990).CrossRefGoogle Scholar
12.Sandu, G. S., Swanson, M. L., and Chu, W. K. (unpublished).Google Scholar