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Internal gettering heat treatments and oxygen precipitation in epitaxial silicon wafers
Published online by Cambridge University Press: 31 January 2011
Abstract
As-received P/P + (100) epitaxial silicon wafers were heat treated using the one-, two-, and three-step internal gettering heat treatment cycles in wet oxygen, dry oxygen, and nitrogen ambients. The results indicate that ambients have an effect on the growth of bulk defects and denuded zone formation in the epitaxial silicon wafers.
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