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Measurement of the thermal conductivity of thin layers using a scanning thermal microscope

Published online by Cambridge University Press:  31 January 2011

Erwin R. Meinders
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

A scanning thermal microscope (SThM) was used to measure the thermal conductivity of thin sputter-deposited films in the thickness range of 10 nm–10 μm. The SThM method is based on a heated tip that is scanned across the surface of a sample. The heat flowing into the sample is correlated to the local thermal conductivity of the sample. Issues like the contact force, the surface roughness of the sample, and tip degradation, which determine to a great extent the contact area between tip and surface, and thus the heat flow to the sample, are addressed in the paper. A calibration curve was measured from known reference materials to quantify the sample heat flow. This calibration was used to determine the effective thermal conductivity of samples. Further, the heat diffusion through a layered sample due to a surface heat source was analyzed with an analytical and numerical model. Measurements were performed with films of aluminum, ZnS–SiO2, and GeSbTe phase change material of variable thickness and sputter-deposited on substrates of glass, silicon, or polycarbonate. It is shown in the paper that the SThM is a suitable tool to visualize relative differences in thermal structure of nanometer resolution. Determination of the thermal conductivity of thin layers is possible for layers in the micrometer range. It is concluded that the SThM is not sensitive enough to measure accurately the thermal conductivity of thin films in the nanometer range. Suggestions for improvement of the SThM method are given.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

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References

1Guenther, K.H., Appl. Opt. 23, 3806 (1984).CrossRefGoogle Scholar
2Knoll, R.W. and Henager, C.H. Jr., J. Mater. Res. 7, 1247 (1992).CrossRefGoogle Scholar
3Hammiche, A., Hourston, D.J., Pollock, H.M., Reading, M., and Song, M., J. Vac. Sci. Technol. B 14, 1486 (1996).CrossRefGoogle Scholar
4Hammiche, A., Reading, M., Pollock, H.M., Song, M., and Hourston, D.J., Rev. Sci. Instrum. 67, 4268 (1996).CrossRefGoogle Scholar
5Hammiche, A., Pollock, H.M., Song, M., and Hourston, D.J., Meas. Sci. Technol. 7, 142 (1996).CrossRefGoogle Scholar
6Fiege, G.B.M. and Balk, L.J., Proceedings, 4th Therminic Work-shop (Cannes, France, 1998), p. 211.Google Scholar
7Balk, L.J., Maywald, M., and Pylkki, R.J., Microscopy of Semicon-ducting Materials (Inst. Phys. Conf. Ser. 146, 1995), p. 655.Google Scholar
8Borca-Tasciuc, T., Chen, G., Wang, D., and Wang, K.L., Proceedings, 16th International Conference on Thermoelectrics (IEEE, New York, 1997), p. 726.Google Scholar
10Oesterschulze, E., Stopka, M., Akermann, L., Scholz, W., and Werner, S., J. Vac. Sci. Technol. B 14, 832 (1996).CrossRefGoogle Scholar
11Stopka, M., Oesterschulze, E., Schulte, J., and Kassing, R., Mater. Sci. Eng. B 24, 226 (1994).CrossRefGoogle Scholar
12Ruiz, F., Sun, W.D., Pollak, F.H., and Venkatraman, C., Appl. Phys. Lett. 73, 1802 (1998).CrossRefGoogle Scholar
13Asnin, V.M., Pollack, F.H., Ramer, J., Schurman, M., and Ferguson, I., Appl. Phys. Lett. 75, 1240 (1999).CrossRefGoogle Scholar
14Gorbunov, V.V., Fuchigami, N., Hazel, J.L., and Tsukruk, V.V., Langmuir 15, 8340 (1999).CrossRefGoogle Scholar
15Callard, S., Tallarida, G., Borghesi, A., and Zanotti, L., J. Non-Cryst. Solids 245, 203 (1999).CrossRefGoogle Scholar
16Fiege, G.B.M., Altes, A., Heiderhoff, R., and Balk, L.J., J. Phys. D.: Appl. Phys. 32, L13 (1999).CrossRefGoogle Scholar
17User Manuals (TA Instruments, New Castle, DE, 1999).Google Scholar
18User Manuals (Topometrix, Sunnyvale, CA, 1999).Google Scholar
19Luo, K., Shi, Z., Varesi, J., and Majumdar, A., J. Vac. Sci. Technol. B 15, 349 (1997).CrossRefGoogle Scholar
20Majumdar, A., Luo, K., Shi, Z., and Varesi, J., Exp. Heat Transfer 9, 83 (1996).CrossRefGoogle Scholar
21Dryden, J.R., J. Heat Transfer 105, 408 (1983).CrossRefGoogle Scholar
22Meinders, E.R., Lankhorst, M., Borg, H.J., and Dekker, M.J., Jpn. J. Appl. Phys. 40, 1558 (2001).CrossRefGoogle Scholar
23Incropera, F.P. and DeWitt, D.P., Fundamentals of Heat and Trans-fer (John Wiley and Sons, New York, 1990).Google Scholar
24 National Physics Laboratory, PP21/CN98/007 and Q9TM2T11L/ C97/ 013 (1998).Google Scholar
25 Goodfellow, Cambridge, United Kingdom (1996).Google Scholar
26Hulstrom, L.C., Tye, R.P., and Smith, S.E., Therm. Conduct. 19, 199 (1988).Google Scholar