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Microstructure of CuInS2 films prepared by sulfuration of Cu–In–O films

Published online by Cambridge University Press:  31 January 2011

Takahiro Wada ,
Takayuki Negami  and
Mikihiko Nishitani
Takahiro Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi Osaka, 570 Japan
Takayuki Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi Osaka, 570 Japan
Mikihiko Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi Osaka, 570 Japan
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Abstract

Polycrystalline CuInS2 thin films are prepared by sulfuration of Cu–In–O films. The Cu–In–O films are deposited from a sintered Cu2In2O5 target by using a pulsed laser deposition (PLD) method. Then, the Cu–In–O films are converted into CuInS2 films by means of a subsequent annealing in an H2S gas atmosphere. The characteristics of the films are determined by using an x-ray diffractometer (XRD), an energy dispersive x-ray spectrometer (EDX), and a scanning electron microscope (SEM). The effects of the deposition and sulfuration temperatures of the Cu–In–O films on the structural and microstructural properties of CuInS2 films are examined experimentally. Single-phase CuInS2 films with a chalcopyrite structure are obtained when Cu–In–O films are sulfurated at a temperature higher than 400 °C. Grain size of CuInS2 is larger when a lower deposition temperature and a higher sulfuration temperature of Cu–In–O films are employed.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 545 - 550
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1Shay, J. and Wernick, J., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications (Pergamon, New York, 1975).Google Scholar
2Rockett, A. and Birkmire, R.W., J. Appl. Phys. 70, R81 (1991).CrossRefGoogle Scholar
3Sun, L.Y., Kazmerski, L.L., Clark, A.H., Ireland, P.J., and Morton, D.W., J. Vac. Sci. Technol. 15, 265 (1978).Google Scholar
4Mitchell, K. W., Pollock, G. A., and Mason, A.V., PROC. 20th IEEE Photovoltaic Spec. Conf., 1542 (1988).Google Scholar
5Lewerenz, H. J., Goslowsky, H., Hasemann, K. D., and Fiechter, S., Nature 321, 687 (1986).CrossRefGoogle Scholar
6Grindle, S. P., Smith, C. W., and Mittleman, S. D., Appl. Phys. Lett. 35, 24 (1979).CrossRefGoogle Scholar
7Binsma, J. J. M. and Linden, H. A. Van Der, Thin Solid Films 97, 237 (1982).CrossRefGoogle Scholar
8Gupta, A. and Murthy, S.N., J. Mater. Chem. 1, 929 (1991).CrossRefGoogle Scholar
9Wada, T., Negami, T., and Nishitani, M., submitted to Appl. Phys. Lett.Google Scholar
10JCPDS Powder Diffraction File, Card No. 30–0479 (Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1984).Google Scholar
11JCPDS Powder Diffraction File, Card No. 6–0416 (Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1984).Google Scholar
12JCPDS Powder Diffraction File, Card No. 5–0661 (Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1984).Google Scholar
13JCPDS Powder Diffraction File, Card No. 27–0159 (Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1984).Google Scholar