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Nanostructure of GaN and SiC Nanowires Based on Carbon Nanotubes

Published online by Cambridge University Press:  31 January 2011

Jing Zhu  and
Shoushan Fan
Jing Zhu*
Affiliation:
Electron Microscopy Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Shoushan Fan
Affiliation:
Electron Microscopy Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing 100084, People's Republic of China
*
a)Address all correspondence to this author. e-mail: jzhu@mail.tsinghua.edu.cn
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Abstract

The nanostructure of GaN and SiC nanowires produced by carbon nanotube confined reaction has been studied by means of high-resolution electron microscopy, microanalysis, and microdiffraction. The GaN nanowire is a single crystal with fewer defects and the SiC nanowire is a β–SiC crystal with heavy layer sequence faults. Considering experimental results, a possible reaction path for making GaN is suggested.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1175 - 1177
Copyright
Copyright © Materials Research Society 1999

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References

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