Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-17T15:57:45.040Z Has data issue: false hasContentIssue false
  • English
  • Français

On the cyclic indentation behavior of crystalline silicon with a sharp tip

Published online by Cambridge University Press:  31 January 2011

N. Fujisawa ,
J.S. Williams  and
M.V. Swain
N. Fujisawa*
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
M.V. Swain
Affiliation:
Biomaterials Science Research Unit, Faculty of Dentistry, University of Sydney, United Dental Hospital, Surry Hills, NSW 2010, Australia
*
a)Address all correspondence to this author: e-mail: naoki.fujisawa@anu.edu.au
Get access

Abstract

Detailed cyclic indentation experiments of crystalline silicon in this study show interesting behavior depending on the end phase from the previous cycle. To enable the behavior of these phases to be studied on reloading, the cyclic indentation response of the material is examined under conditions where the pressure-induced Si-II phase transforms either to amorphous (a-Si) or high pressure Si-XII/Si-III phases on unloading. For an amorphous end phase the subsequent reloading is hysteretic, and for high pressure crystalline end phases it is elastic. This indicates that, whereas a-Si re-transforms readily to Si-II upon reloading, Si-XII/Si-III does not retransform to Si-II even at the maximum indentation load. Based on the concept of the effective indenter shape and stresses induced in the material, we show that Si-XII/Si-III has a greater critical hydrostatic pressure for retransformation to Si-II than that of the diamond cubic Si-I.

Keywords

SiCrystallineAmorphous
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 11 , November 2007 , pp. 2992 - 2997
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Hu, J.Z., Merkle, L.D., Menoni, C.S., Spain, I.L.: Crystal data for high pressure phases of silicon. Phys. Rev. B 34, 4679 1986CrossRefGoogle ScholarPubMed
2Imai, M., Mitamura, T., Yaoita, K., Tsuji, K.: Pressure-induced phase transition of crystalline and amorphous silicon and germanium at low temperatures. High Pressure Res. 15, 167 1996CrossRefGoogle Scholar
3Crain, J., Ackland, G.J., Maclean, J.R., Piltz, R.O., Hatton, P.D., Pawley, G.S.: Reversible pressure-induced structural transitions between metastable phases of silicon. Phys. Rev. B 50, 13043 1994CrossRefGoogle ScholarPubMed
4Piltz, R.O., Maclean, J.R., Clark, S.J., Ackland, G.J., Hatton, P.D., Crain, J.: Structure and properties of silicon XII: A complex tetrahedrally bonded phase. Phys. Rev. B 52, 4072 1995CrossRefGoogle ScholarPubMed
5Domnich, V., Gogotsi, Y.: Phase transformations in silicon under contact loading. Rev. Adv. Mater. Sci. 3, 1 2002Google Scholar
6Domnich, V., Gogotsi, Y., Dub, S.: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 76, 2214 2000CrossRefGoogle Scholar
7Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., Munroe, P.: Mechanical deformation in silicon by micro-indentation. J. Mater. Res. 16, 1500 2001CrossRefGoogle Scholar
8Juliano, T., Gogotsi, Y., Domnich, V.: Effect of indentation unloading conditions on phase transformation induced events in silicon. J. Mater. Res. 18, 1192 2003CrossRefGoogle Scholar
9Jang, J.I., Lance, M.J., Wen, S., Tsui, T.Y., Pharr, G.M.: Indentation-induced phase transformation in silicon: Influences of load, rate and indenter angle on the transformation behavior. Acta Mater. 53, 1759 2005CrossRefGoogle Scholar
10Yan, J., Takahashi, H., Gai, X., Harada, H., Tamaki, J., Kuriyagawa, T.: Load effects on the phase transformation of single-crystal silicon during nanoindentation tests. Mater. Sci. Eng., A 423, 19 2006CrossRefGoogle Scholar
11Pharr, G.M., Oliver, W.C., Clarke, D.R.: The mechanical behavior of silicon during small-scale indentation. J. Electron. Mater. 19, 881 1990CrossRefGoogle Scholar
12Zarudi, I., Zhang, L.C., Swain, M.V.: Behavior of monocrystalline silicon under cyclic microindentations with a spherical indenter. Appl. Phys. Lett. 82, 1027 2003CrossRefGoogle Scholar
13Mann, A.B., Heerden, D.V., Pethica, J.B., Weihs, T.P.: Size-dependent phase transformations during point loading of silicon. J. Mater. Res. 15, 1754 2000CrossRefGoogle Scholar
14Pharr, G.M., Bolshakov, A.: Understanding nanoindentation unloading curves. J. Mater. Res. 17, 2660 2002CrossRefGoogle Scholar
15Shimomura, O., Minomura, S., Sakai, N., Asaumi, K., Tamura, K., Fukushima, J., Endo, H.: Pressure-induced semiconductor-metal transitions in amorphous Si and Ge. Philos. Mag. A 29, 547 1974CrossRefGoogle Scholar