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Oxidation and reduction behavior of pure indium

Published online by Cambridge University Press:  31 January 2011

Harry Schoeller  and
Junghyun Cho
Junghyun Cho*
Affiliation:
Department of Mechanical Engineering and Materials Science and Engineering Program, State University of New York at Binghamton, Binghamton, New York 13902-6000
*
a) Address all correspondence to this author. e-mail: jcho@binghamton.edu
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Abstract

Fundamental knowledge on the oxidation behavior of pure indium, commonly used as a low-temperature, fluxless soldering material in micro-electro-mechanical system (MEMS) devices, is of importance as it influences the solder joint reliability. A thermodynamic model of the oxidation and reduction behavior of indium is developed by constructing an Ellingham diagram, and by using H2(g) reactions. Partial pressure (p) of H2O was shown to be the critical parameter in creating a reducing environment in the applicable solder reflow temperature range. Verification of the thermodynamic models was then carried out through heating and melting of indium in controlled glove box environments by adjusting p(H2)/p(H2O). The nanometer scale thickness of the oxide layer grown on indium was measured by a spectroscopic ellipsometer. The growth mechanism for oxidation in air below 220 °C follows Uhlig's logarithmic law where electron transport is the rate-controlling mechanism, implying that there is an incubation period for the onset of initial oxidation. Its activation energy was found to be 0.65 eV.

Keywords

LnOxidationSoldering
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 2 , February 2009 , pp. 386 - 393
Copyright
Copyright © Materials Research Society 2009

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References

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