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Preparation and oxidation of Al4SiC4

Published online by Cambridge University Press:  31 January 2011

Osamu Yamamoto ,
Motoko Ohtani  and
Tadashi Sasamoto
Osamu Yamamoto*
Affiliation:
Department of Applied Chemistry, Kanagawa Institute of Technology, 1030 Shimo-ogino, Atsugi 243–0292, Japan
Motoko Ohtani
Affiliation:
Department of Applied Chemistry, Kanagawa Institute of Technology, 1030 Shimo-ogino, Atsugi 243–0292, Japan
Tadashi Sasamoto
Affiliation:
Department of Applied Chemistry, Kanagawa Institute of Technology, 1030 Shimo-ogino, Atsugi 243–0292, Japan
*
a)Address all correspondence to this author.yamamoto@chem.kanagawa-it.ac.jp
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Abstract

Single-phase Al4SiC4 was successfully synthesized by heating the powder mixture of aluminum, silicon, and carbon black in the molar ratio corresponding to the chemical composition of Al4SiC4 with a small amount of triethanolamine (TEA) above 1200 °C in argon gas. Without TEA, two phases of Al4C3 and SiC were formed, irrespective of the heating temperature. The marked mass gain by oxidation of Al4SiC4 was observed with forming Al2O3 and SiO2 in the range of 850 to 1150 °C, which slightly increased above 1150 °C. At 1600 °C, mullite was formed by the reaction between Al2O3 and SiO2.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 4 , April 2002 , pp. 774 - 778
Copyright
Copyright © Materials Research Society 2002

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