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Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Published online by Cambridge University Press:  03 March 2011

Jennifer Ross ,
Mike Rubin  and
T.K. Gustafson
Jennifer Ross
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, MS 2-300, Berkeley, California 94720
Mike Rubin
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, MS 2-300, Berkeley, California 94720
T.K. Gustafson
Affiliation:
University of California, 183M Cory, Berkeley, California 94720
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Abstract

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2613 - 2616
Copyright
Copyright © Materials Research Society 1993

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References

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