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Structural Characterization of Boron-doped Submicron Vapor-grown Carbon Fibers and Their Anode Performance

Published online by Cambridge University Press:  31 January 2011

K. Nishimura
Affiliation:
Faculty of Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
Y. A. Kim
Affiliation:
Faculty of Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
T. Matushita
Affiliation:
Faculty of Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
T. Hayashi
Affiliation:
Faculty of Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
M. Endo*
Affiliation:
Faculty of Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
M. S. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
*
a)Address all correspondence to this author. e-mail: endo@endomoribu.shinshu-u.ac.jp

Abstract

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Structural evolution of undoped and boron-doped submicron vapor-grown carbon fibers (S-VGCFs) was monitored as a function of heat-treatment temperature (HTT). Based on x-ray and Raman data, over the range of HTT from 1800 to 2600 °C, it was found that boron atoms act as catalysts to promote graphitization due to boron's higher diffusivity. For the range of HTT from 2600 to 2800 °C, the process of boron out-diffusion from the host material induces defects, such as tilt boundaries; this process would be related with the improved capacity and Coulombic efficiency of boron-doped S-VGCFs. When 10 wt% S-VGCFs was used as an additive to synthetic graphite, the cyclic efficiency of the capacities was improved to almost 100%.

Type
Articles
Copyright
Copyright © Materials Research Society 2000

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