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Structural studies of diamond thin films grown from dc arc plasma

Published online by Cambridge University Press:  31 January 2011

L. C. Nistor ,
J. Van Landuyt ,
V. G. Ralchenko ,
A. A. Smolin ,
K. G. Korotushenko  and
E. D. Obraztsova
L. C. Nistor
Affiliation:
EMAT, University of Antwerpen, Groenenborgerlaan 171, B 2020 Antwerpen, Belgium
J. Van Landuyt
Affiliation:
EMAT, University of Antwerpen, Groenenborgerlaan 171, B 2020 Antwerpen, Belgium
V. G. Ralchenko
Affiliation:
General Physics Institute, ul. Vavilova 38, Moscow 117942, Russia
A. A. Smolin
Affiliation:
General Physics Institute, ul. Vavilova 38, Moscow 117942, Russia
K. G. Korotushenko
Affiliation:
General Physics Institute, ul. Vavilova 38, Moscow 117942, Russia
E. D. Obraztsova
Affiliation:
General Physics Institute, ul. Vavilova 38, Moscow 117942, Russia
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Abstract

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2533 - 2542
Copyright
Copyright © Materials Research Society 1997

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References

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