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Study of Stresses in Thin Silicon Wafers with Near-infraredphase Stepping Photoelasticity

Published online by Cambridge University Press:  31 January 2011

Tieyu Zheng  and
Steven Danyluk
Tieyu Zheng
Affiliation:
The George Woodruff Mechanical Engineering School, Georgia Institute of Technology,Atlanta, Georgia 30332
Steven Danyluk
Affiliation:
The George Woodruff Mechanical Engineering School, Georgia Institute of Technology,Atlanta, Georgia 30332
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Abstract

This paper reports on a study of stress in thin silicon plates sectioned from wafers by a near-infrared transmission technique. Phase stepping was incorporated to determine the magnitude and orientation of stress from fractional birefringence fringe images. The anisotropic relative optic-stress coefficient of (100) silicon was determined and the limitation of the stress orientation measurement is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 36 - 42
Copyright
Copyright © Materials Research Society 2002

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References

Campbell, S.A., The Science and Engineering of Microelectronic Fabrication (Oxford University Press, New York, 1996).Google Scholar
Lambropoulos, J.C. and Hutchinson, J.W., J. Cryst. Growth 65, 324 (1983).CrossRefGoogle Scholar
Mataga, P.A., Hutchinson, J.W., and Chalmers, B., J. Cryst. Growth 82, 60 (1987).CrossRefGoogle Scholar
Bond, W.J. and Andrus, J., Lett. Phys. 1211 (1956).Google Scholar
Lederhandler, S.R., J. Appl. Phys. 39, 1631 (1959).CrossRefGoogle Scholar
DeNicola, R.O. and Tauber, R.N., J. Appl. Phys. 42, 4262 (1971).CrossRefGoogle Scholar
Kotake, H. and Takasu, S., J. Cryst. Growth 50, 743 (1980).CrossRefGoogle Scholar
Shimaoka, M., Kumazawa, T., Sakamoto, T., and Kawai, S., J. Non-destructive Inspection, 36, 901 (1987).Google Scholar
Date, K., Advances in Electronic Packaging, edited by Chen, W.T. and Abe, H. (American Society of Mechanical Engineers, New York, 1992), pp. 985–989.Google Scholar
Gorshkov, V.G., Danileiko, Y.K., Osiko, V.V., Sidorin, A.V., Veselovskaya, N.V., Dankovskii, Y.V., and Shklyar, B.L., Phys. Status Solidi A 106, 363 (1988).CrossRefGoogle Scholar
Niitsu, Y., Ichinose, K., and Ikegami, K., Mechanics and Materials for Electronic Packaging: Vol 2—Thermal and Mechanical Behavior and Modeling, edited by Chen, W.T., Schen, M.A., and Dunn, M.L. (American Society of Mechanical Engineers, New York, 1994), Vol. 187, pp. 29–35.Google Scholar
Niitsu, Y. and Gomi, K., Mechanics and Materials for Electronic Packaging: Vol. 2—Thermal and Mechanical Behavior and Modeling, edited by Chen, W.T., Schen, M.A., and Dunn, M.L. (American Society of Mechanical Engineers, New York, 1994), Vol. 187, pp. 37–40.Google Scholar
Haake, S.J. and Patterson, E.A., Strain Nov., 153 (1992).CrossRefGoogle Scholar
Carazo-Alvarez, J., Haake, S.J., and Patterson, E.A., Opt. Lasers Eng. 21, 133 (1994).CrossRefGoogle Scholar
Wang, Z.F. and Patterson, E.A., Opt. Lasers Eng. 22, 91 (1995).CrossRefGoogle Scholar
Patterson, E.A., Ji, W., and Wang, Z.F., Opt. Lasers Eng. 28, 17 (1997).CrossRefGoogle Scholar
Narasimhamurty, T.S., Photoelastic and Electro-optic Properties of Crystals (Plenum Press, New York, 1981).CrossRefGoogle Scholar
Liang, H., Pan, Y., Zhao, S., Qin, G., and Chin, K.K., J. Appl. Phys. 71, 2863 (1992).CrossRefGoogle Scholar
Kobayashi, A.S., Handbook on Experimental Mechanics (Society of Experimental Mechanics, Bethel, CT, 1993).Google Scholar
Kuske, A. and Robertson, G., Photoelasticity Stress Analysis (John Wiley & Sons, New York, 1974).Google Scholar
Zheng, T., Ph.D. Dissertation, Georgia Institute of Technology, Atlanta, GA (2000).Google Scholar