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Picosecond time-resolved X-ray diffraction from laser-shocked semiconductors

Published online by Cambridge University Press:  01 July 2004

KAZUTAKA G. NAKAMURA ,
YOICHIRO HIRONAKA ,
HIDETAKA KAWANO ,
HIROAKI KISHIMURA  and
KEN-ICHI KONDO
KAZUTAKA G. NAKAMURA
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan
YOICHIRO HIRONAKA
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan
HIDETAKA KAWANO
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan
HIROAKI KISHIMURA
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan
KEN-ICHI KONDO
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan
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Abstract

Ultrashort pulsed hard X rays are generated by focusing an intense femtosecond laser beam onto metal targets. Kα emissions are obtained from a Cu target. Picosecond time-resolved X-ray diffraction is performed to investigate structural dynamics of laser-shocked semiconductors using the laser plasma X-ray pulses. Lattice deformation associated with shock-wave propagation is directly observed. Evolution of strain profiles inside the crystal is determined without disturbance from the time-resolved X-ray diffraction patterns.

Keywords

Femtoescond laserIntense laser fieldLaser plasma X raysSemiconductors
Type
Research Article
Information
Laser and Particle Beams , Volume 22 , Issue 3 , July 2004 , pp. 285 - 288
Copyright
© 2004 Cambridge University Press

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