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3D Atomic Scale Analysis of CMOS type structures for 14 nm UTBB-SOI technology

Published online by Cambridge University Press:  23 September 2015

Robert Estivill
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France. Univ. Grenoble Alpes' F-38000 Grenoble' France CEA, LETI, MINATEC Campus, F-38054 Grenoble, France. Groupe de Physique des Materiaux - GPM UMR CNRS 6634, Universite de Rouen, France.
Adeline Grenier
Affiliation:
Univ. Grenoble Alpes' F-38000 Grenoble' France CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
Tony Printemps
Affiliation:
Univ. Grenoble Alpes' F-38000 Grenoble' France CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
Marc Juhel
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France.
Magali Gregoire
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France.
Pierre Caubet
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France.
Didier Blavette
Affiliation:
Groupe de Physique des Materiaux - GPM UMR CNRS 6634, Universite de Rouen, France.

Abstract

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Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Thomas, F., et al.., Rev Sci Instrum 78 (2007) 031101.Google Scholar
[2] Panciera, F., et al.., Appl Phys Lett 100 (2012) 201909.CrossRefGoogle Scholar
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[4] Grenier, A., et al.., Ultramicroscopy 136 (2014) 185.CrossRefGoogle Scholar
[5] This study has been performed at the nanocharacterisation platform (PFNC) of the Minatec Campus and ST Microelectonics, Crolles. The author would like to acknowledge a CIFRE (ANRT) scholarship.Google Scholar