Hostname: page-component-5c6d5d7d68-wbk2r Total loading time: 0 Render date: 2024-08-06T14:26:45.797Z Has data issue: false hasContentIssue false
  • English
  • Français

Ain Films Grown by Electric Field Induced Flux of al Cations

Published online by Cambridge University Press:  02 July 2020

Matthew T. Johnson ,
Zhigang Mao  and
C. Barry Carter
Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minneapolis, MN55455
Zhigang Mao
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minneapolis, MN55455
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minneapolis, MN55455
Get access

Extract

The properties of aluminum nitride (A1N) make it an interesting material for applications in the microelectronics industry. These properties include: a large bandgap, good thermal conductivity, high-temperature stability and chemical inertness. Additionally, thin A1N films are used as buffer layers for the growth of GaN on alumina. In the present study, thin-films of A1N have been grown on (000l)-oriented α-Al2O3 through the use of an electric field. At elevated temperatures an electric field applied across a normally insulating oxide material will typically induce a flux of ions that carry current. In the case of Al2O3, since the more mobile species are the Al3+ cations, by applying an electric-field across the material, with an appropriate electrode material, a flux of 3+ cations can be induced toward the cathode surface (negative electrode).

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 638 - 639
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Kuwano, N. et al., J. of Crystal Growth 115 [1-4] (1991) 381–387.CrossRefGoogle Scholar
2.Johnson, M. T. et al., Solid State Ionics, 101-103 (1997) 1327–1333.CrossRefGoogle Scholar
3.Susnitsky, D. W. and C. B. Carter, , J. Am. Ceram. Soc, 75 [9] (1992) 2463–2478.CrossRefGoogle Scholar
4.Heffelfmger, J. R., M. W. Bench, and C. B. Carter, , Surf. ScL, 343 (1995) LI 161.Google Scholar
5. The authors acknowledge the research support of the 3M Harry Heltzer Chair and the Center for Interfacial Engineering, a National Science Foundation Engineering Research CenterGoogle Scholar