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Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography

Published online by Cambridge University Press:  25 June 2021

Florian Chabanais ,
Enrico Di Russo ,
Alexander Karg ,
Martin Eickhoff ,
Williams Lefebvre  and
Lorenzo Rigutti
Florian Chabanais
Affiliation:
UNIROUEN, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000Rouen, France
Enrico Di Russo
Affiliation:
UNIROUEN, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000Rouen, France
Alexander Karg
Affiliation:
Institute of Solid State Physics, University of Bremen, Bremen, Germany
Martin Eickhoff
Affiliation:
Institute of Solid State Physics, University of Bremen, Bremen, Germany
Williams Lefebvre
Affiliation:
UNIROUEN, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000Rouen, France
Lorenzo Rigutti*
Affiliation:
UNIROUEN, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000Rouen, France
*
*Author for correspondence: Lorenzo Rigutti, E-mail: lorenzo.rigutti@univ-rouen.fr
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Abstract

The measurement of the composition of ε-Ga2O3 and the quantification of Sn doping in ε-Ga2O3:Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending on the experimental conditions. Both the role of the laser energy and surface electric field were investigated, and the results clearly indicate that deviations from stoichiometry are observed changing the electric field conditions during APT. The measured atomic fraction of Ga can change from 0.45 at low field to 0.38 at high field, to be compared with the expected 0.4. This was interpreted in terms of preferential evaporation of Ga at high field and deficit of O at low field, which was caused by the formation of neutrals. The quantification of Sn-doping is accurate at low-field conditions, with an overestimation of the detected Sn-metallic fraction at high field. This suggests that Sn has a higher evaporation field compared to Ga. Finally, multiple detection events were in-depth studied, revealing that three dissociation reactions occur during APT: GaO2+ → Ga+ + O+; Ga2O22+ → Ga+ + GaO2+; Ga3O22+ → Ga+ + Ga2O2+. Nevertheless, only 2% of the detected events are related to such dissociation reactions, too small a fraction to fully explain the observed deviation from the stoichiometric composition in ε-Ga2O3.

Type
Materials Science Applications
Information
Microscopy and Microanalysis , Volume 27 , Issue 4 , August 2021 , pp. 687 - 695
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

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Footnotes

†

Both authors contributed equally to this work.

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