A dielectric O-N-O multi-layer is formed between a single-crystal silicon substrate and a polycrystalline silicon gate to insulate them. The nominal structure of the layer is SiO2-Si3N4-SiO2. In this study, in order to visualize the elemental distribution, energy filtered mapping technique was used and also the relative concentration was calculated from the intensities of the elemental maps to characterize the structure quantitatively.

The specimen was cut from a 16M-DRAM device and made suitable for TEM observation by the cross-section ion milling method. The O-N-O layer was examined using a JEM-2010F FE-TEM equipped with a post column energy filter(GIF 200). Fig. 1 shows energy filtered elemental maps of Si, O and N with an elastic image of the O-N-O layer obtained by the three-window method.

As a map is produced after a background intensity extrapolated from two pre-edge images is subtracted from a post-edge image, each pixel of these maps provides energy loss intensity of an element.