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Determination of Atomic Positions in SiC 4H Using Quantitative Convergent Beam Refinements
Published online by Cambridge University Press: 02 July 2020
Extract
Silicon carbide (SiC) is a widely used ceramic material, with many structural and electronic applications. It exists in many polytypes, differing from one another only by the stacking sequence of close packed double layers of Si and C atoms. The polytype called 4H has the hexagonal structure shown in figure 1. The double layers here have a stacking sequence of ABACABAC.. The distance z between the Si and the C layers (shown in figure 1) is an adjustable parameter, which is not exactly known. The aim of this work is to determine the atomic positions in the c-direction by quantitative convergent beam electron diffraction (QCBED). The goal is to develop a general refinement approach for structure determination by electron diffraction. Many newly synthesized materials are available in only very small quantities in the single crystal form and/or mixed with other phases, making X-ray diffraction methods difficult. SiC is often full of stacking faults. For these types of materials, the CBED method is ideal because of the small probe that can be used; areas of less than 100 Å can be studied.
- Type
- Electron Crystallography; the Electron Phase Problem
- Information
- Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 1051 - 1052
- Copyright
- Copyright © Microscopy Society of America 1997