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Determination of the Electronic Structures of Screw and Edge Dislocations in Gan Using Atomic Resolution EELS

Published online by Cambridge University Press:  02 July 2020

I. Arslan ,
Y. Xin ,
E. M. James ,
S. Sivananthan ,
N. D. Browning ,
S. J. Pennycook ,
F. Omnes ,
B. Beaumont ,
J-P Faurie  and
P. Gibart
I. Arslan
Affiliation:
University of Illinois at Chicago, Department of Physics, 845 W. Taylor St, Chicago, IL60607-7059, USA.
Y. Xin
Affiliation:
University of Illinois at Chicago, Department of Physics, 845 W. Taylor St, Chicago, IL60607-7059, USA.
E. M. James
Affiliation:
University of Illinois at Chicago, Department of Physics, 845 W. Taylor St, Chicago, IL60607-7059, USA.
S. Sivananthan
Affiliation:
University of Illinois at Chicago, Department of Physics, 845 W. Taylor St, Chicago, IL60607-7059, USA.
N. D. Browning
Affiliation:
University of Illinois at Chicago, Department of Physics, 845 W. Taylor St, Chicago, IL60607-7059, USA.
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN37831-6030USA.
F. Omnes
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560, Valbonne, France.
B. Beaumont
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560, Valbonne, France.
J-P Faurie
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560, Valbonne, France.
P. Gibart
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560, Valbonne, France.
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Extract

In recent years, GaN and its alloys have been the subject of an intense global research effort to develop its optoelectronic properties in the blue-green region of the spectrum. Of particular interest has been the fact that despite a high density of threading dislocations, on the order of 108 to 1010 per cm2, thin film devices retain their ability to emit light. The origin of this behavior remains unclear, and it has even been suggested that reducing the number of defects by employing different growth techniques does not necessarily increase the crystal's lasing abilities. As research is now aiming to grow GaN on silicon (silicon has a large lattice-mismatch to GaN) in order to develop an inexpensive LED technology, dislocations are likely to remain a major issue. It is therefore essential that we develop a fundamental understanding of the electronic structure of these defects, in order to determine their effect on the properties.

Type
Electron Energy-Loss Spectroscopy (EELS) and Imaging
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 190 - 191
Copyright
Copyright © Microscopy Society of America

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References

1. Nakamura, S. et al, Appl Phys Lett 76 (2000) 22.CrossRefGoogle Scholar

2. Brillson, L. J. et al, Physica B 274 (1999) 70.CrossRefGoogle Scholar

3. Xin, Y. et al, Appl Phys Lett 76 (2000) 466.CrossRefGoogle Scholar

4. Browning, N. D. et al, Phys Rev B 58 (1998) 8289.CrossRefGoogle Scholar

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6. This research is sponsored by the NSF under grant number DMR-9733895 and by the DOE under contract number DE-AC05-96OR22464 with Lockheed Martin Energy Research Corporation.Google Scholar