Titanium nitride coatings were grown in a physical vapor deposition system assisted by a direct current reactive magnetron sputtering technique. The vacuum chamber was evacuated with a mechanical pump and cryopump to a base pressure of 10-7 Torr. The Sputtering was performed with a direct current high voltage source (0-1 Kev and 1 A) on a titanium target (99.98% purity). The titanium target was sputtered with a high purity argon -nitrogen mixture. The films were deposited on monocrystalline silicon (mc-Si) (111) substrates at different nitrogen partial pressures from 0.08 mTorr to 1.5 mTorr. Total pressure, power applied to target and substrate temperature were keep constant in all the experiments.

EXEELFS analysis were done using the standard procedure [1,2]. In this case, we are find that the atomic concentration is in good agreement with the respective established stoichioinetry N/T=0.99. Figure 1 shows the window of high energy loss where appears their respective N K-edge and Ti -L23.