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High-Resolution Observation of Si100-xVx Amorphous Alloys by HAADF-STEM
Published online by Cambridge University Press: 02 July 2020
Extract
A combination of Si and transition metal element like V, Ni and Au can form an amorphous phase over a wide composition range. Extensive studies have been reported in relation to a change in the electron transport properties across the metal-insulator transition. It has been reported that the metal-insulator transition in the amorphous Si100−xVx alloys accompanies a substantial change in both the electronic structure and atomic structure around x=18, as revealed by the photoemission spectroscopy and neutron diffraction experiments[1]. It is of great interest to examine the structural change associated with the metal-insulator transition at an atomic level by utilizing the HRTEM[2]. However, the correspondence between the image contrast and projection of atomic structures in amorphous materials is usually indirect due to the well-known phenomena of phase contrast in HRTEM. High-angle detection annular dark field scanning transmission electron microscopy (HAADF-STEM) as illustrated in Fig.1 is a solution of the problem without contrast reversal due to the lens-defocus and thickness-variation of samples.
- Type
- Phase Transformations in Metals and Alloys
- Information
- Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 719 - 720
- Copyright
- Copyright © Microscopy Society of America 1997
References
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