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Prospects For Imaging of Single Dopant Atoms in Silicon by ADF Stem

Published online by Cambridge University Press:  02 July 2020

Richard R. Vanfleet  and
John Silcox
Richard R. Vanfleet
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
John Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
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Extract

The demands of the National Technology Roadmap for Semiconductors will necessitate measurement of dopant concentrations with greater spatial resolution than now possible. Current experimental and simulation experience indicate that Annular Dark Field (ADF) imaging in a Scanning Transmission Electron Microscope (STEM) should be able to determine dopant distributions with near atomic resolution. The ADF signal is derived from electrons diffusely scattered to high angles, resulting in contrast due to atomic number (Z-contrast) and defects in the crystal lattice. Thus, heavy atoms can be imaged by their Z-contrast and small atoms by the misfit strain induced in the silicon lattice. Atomic number scattering is proportional to Zn where n is between 1.5 and 1.9 depending upon the inner detector angle of the ADF detector.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 646 - 647
Copyright
Copyright © Microscopy Society of America

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References

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