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Quantitative In-Situ Nanoindentation of Thin Films in a Transmission Electron Microscope

Published online by Cambridge University Press:  02 July 2020

A.M. Minorl
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720
E.A. Stach
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720
J.W. Morris
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720
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Abstract

A unique in situ nanoindentation stage has been built and developed at the National Center for Electron Microscopy in Berkeley, CA. By using piezoceramic actuators to finely position a 3-sided, boron-doped diamond indenter, we are able to image in real time the nanoindentation induced deformation of thin films. Recent work has included the force-calibration of the indenter, using silicon cantilevers to establish a relationship between the voltage applied to the piezoactuators, the displacement of the diamond tip, and the force generated.

In this work, we present real time, in situ TEM observations of the plastic deformation of Al thin films grown on top of lithographically-prepared silicon substrates. The in situ nanoindentations require a unique sample geometry (see Figure 1) in which the indenter approaches the specimen normal to the electron beam. in order to meet this requirement, special wedge-shaped silicon samples were designed and microfabricated so that the tip of the wedge is sharp enough to be electron transparent.

Type
TEM Instrument Development (Organized by D. Smith and L. Allard)
Copyright
Copyright © Microscopy Society of America 2001

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References

1 Wall, M. and Dahmen, U., Microscopy and Microanalysis, 3, 1997Google Scholar

2 Stach, , et al., Microscopy and Microanalysis, submittedGoogle Scholar