Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-20T08:27:01.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Sampling Depth Controlled by Accelerating Voltage in a Low Voltage SEM

Published online by Cambridge University Press:  02 July 2020

N. Yao ,
C. Harrison ,
D. H. Adamson ,
M. Park ,
P. Chaikin  and
R. A. Register
N. Yao
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ08540
C. Harrison
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ08540 Department of Physics, Princeton University, Princeton, NJ08540
D. H. Adamson
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ08540
M. Park
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ08540 Department of Physics, Princeton University, Princeton, NJ08540
P. Chaikin
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ08540 Department of Physics, Princeton University, Princeton, NJ08540
R. A. Register
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, NJ08540 Department of Chemical Engineering, Princeton University, Princeton, NJ, 08540
Get access

Extract

A fundamental new pathway to a basic understanding of nanostructured composite thin films has been recently afforded by advances in both high brightness field emission electron source and electron optics in the SEM. The key advantages of controlling the incident electron beam at low energies (< 5 keV) for surface imaging has been largely focused on goals such as the reduction of sample charging and minimization of macroscopic radiation damage. In this paper, we present a new opportunity to obtain sampling depth information by controlling the incident electron beam energy. One of the major factors which determines the contrast seen in SEM images is the interaction of the incident electron beam with the solid. As a result of this interaction, the secondary electron yield is proportional to the stopping power of the electron as described by the Bethe penetration depth,where dE/dl is the stopping power of incident electron with energy Einc and Emin is some suitable lower energy limit for the interaction.

Type
Low Voltage SEM Imaging and Analysis for the Biological and Materials Sciences
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 1241 - 1242
Copyright
Copyright © Microscopy Society of America 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Vezie, D. L., Thomas, E. L., and Adams, W. W., Polymer 36 (9) (1995) 1761.10.1016/0032-3861(95)90923-PCrossRefGoogle Scholar
2.Butler, J. H., Joy, D. C, Bradley, G. F., Krause, S. J., Polymer 36 (9) (1995) 1781.10.1016/0032-3861(95)90924-QCrossRefGoogle Scholar
3.Yao, N. and Aksay, I. A., in Proc. Microscopy and Microanalysis, (1995) Pp. 208.Google Scholar
4.Joy, D. C. and Joy, C. S., Micron, 27 (3/4), 247-63 (1996).10.1016/0968-4328(96)00023-6CrossRefGoogle Scholar
5.Bates, F. S., Fredrickson, G.H., Ann. Rev. Phys. Chem. 41 (1990) 525.10.1146/annurev.pc.41.100190.002521CrossRefGoogle Scholar
6.Harrison, C., Park, M., Chaikin, P., Register, R. A., Adamson, D. H., and Yao, N., Polymer (1997) submitted.Google Scholar
7. This work was supported by the MRSEC program of the National Science Foundation under Award Number DMR-940032.Google Scholar