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Scanning Capacitance Microscopy of Dopants in III-V Semiconductors

Published online by Cambridge University Press:  02 July 2020

David V. Lang
David V. Lang*
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ, 07974
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Scanning Capacitance Microscopy (SCM) was first developed in 1985 as a method for sensing tip-to-sample spacing for surface topography profiling in connection with the RCA VideoDisc. Williams and coworkers were the first to use an SCM for obtaining dC/dV doping profiles in semiconductors, albeit with a rather modest resolution of 200 nm. More recently, it has been developed as a 50-nmresolution tool for microscopic doping analysis of semiconductors by measuring the tip-to-sample rf capacitance in an AFM controlled by other means, e.g. by laser beam deflection of a cantilever tip. In this paper we report on the application of SCM to study the 2D doping profiles of InP-based devices, such as multi-quantum well lasers.

It is particularly convenient to prepare cross sections of III-V devices, since the material readily cleaves on [110] planes, as compared to silicon where cross sections must be obtained by painstaking polishing.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 640 - 641
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Matey, J. R. and Blanc, J., J. Appl. Phys. 57(1985)1437.CrossRefGoogle Scholar
2.Williams, C. C. et. al., Appl. Phys. Lett. 55 (1989)1663.Google Scholar
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4. Dimension 3000 System, Digital Instruments, Inc., Santa Barbara, CA.Google Scholar