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A TEM Study of Cr Based Contacts to (0001) 6H-SiC

Published online by Cambridge University Press:  02 July 2020

R.-J. Liu ,
M. J. Kim ,
R. W. Carpenter ,
L. M. Porter ,
L. P. Scheunemann  and
R. F. Davis
R.-J. Liu
Affiliation:
Science and Engineering of Materials Program and Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
M. J. Kim
Affiliation:
Science and Engineering of Materials Program and Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
R. W. Carpenter
Affiliation:
Science and Engineering of Materials Program and Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
L. M. Porter
Affiliation:
Now at the Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania15213
L. P. Scheunemann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7907
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Extract

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and optoelectronic devices have been produced in SiC films. The search for metals which can form thermally stable, uniform ohmic contacts with SiC with low resistivity is still ongoing. In this study, Cr and CrBx (1<x<2) films were deposited by electron beam evaporation onto p-type, vicinal Si-terminated (0001) 6H-SiC surface. Both contacts exhibited rectifying behavior in the as-deposited condition. Ohmic-like behavior was observed for Cr/SiC system after annealing at 1000 °C for 240 seconds in a rapid thermal anneal furnace in an Ar atmosphere. It was also reported that ohmic behavior was observed for CrB2 /SiC system after annealing at 1100 °C for 2 minutes at a pressure of 5x10“7 Torr.2 The microstructure and chemistry of these two contact systems in both as-deposited and annealed conditions were investigated by transmission electron microscopy (TEM).

Type
Surfaces and Interfaces
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1064 - 1065
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Rea, L. S., Mat. Res. Soc. Symp. Proc. Vol. 423 (1996) 3.CrossRefGoogle Scholar
2.Oder, T. N. et al., Journal of Electronic Materials, Vol. 27 (1998) 324.CrossRefGoogle Scholar
3. This research was supported by the US DOE Division of Materials Sciences under grant DE-FG03-94ER45510 (ASU) and the Office of Naval Research under Contract N0014-95-J-1080 (NCSU).Google Scholar