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Analysis of Influence of Voltage on Potential Barrier on BiCuVOX and BiTiVOX Ceramics

Published online by Cambridge University Press:  02 April 2013

S.M. Gheno ,
V.L. Pimentel ,
M.R. Morelli  and
P.I. Paulin Filho
S.M. Gheno*
Affiliation:
UFSCar, Federal University of Sao Carlos, Department of Materials Engineering, Brazil FATEC, Faculty Technology of Sertãozinho, Brazil
V.L. Pimentel
Affiliation:
LNLS, Brazilian Synchrotron Light Laboratory (LNLS), Brazil
M.R. Morelli
Affiliation:
UFSCar, Federal University of Sao Carlos, Department of Materials Engineering, Brazil
P.I. Paulin Filho
Affiliation:
UFSCar, Federal University of Sao Carlos, Department of Materials Engineering, Brazil
*
*Corresponding author. E-mail: gheno@dema.ufscar.br
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Abstract

The BiMeVOx family of compounds appears to be more attractive for applications at low temperatures when ionic conductivity is the determining parameter. The objective of this study was to analysis the influence of voltage of the behavior of the Schottky barrier in both BiCuVOX and BiTiVOX. The samples were analyzed by atomic force microscopy and electric force microscopy (EFM). EFM experiments were conducted to map the electric field distribution on the surface. The formation of Schottky barriers was observed, and their height and width measured. BiCuVOX samples show a barrier width of 140 nm, and BiTiVOX shows a barrier width of 350 nm. The applied voltage has no effect on the barrier width but increases the peak height as observed in the cantilever frequency as measured with the EFM technique.

Keywords

BiCuVOXBiTiVOXgrain boundarieselectric force microscopy (EFM)electrical propertiesSchottky barrier
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 19 , Issue 3 , June 2013 , pp. 688 - 692
Copyright
Copyright © Microscopy Society of America 2013 

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